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UNOGAN focuses on improving the assessment of polarization-induced two-dimensional carriers in gallium nitride materials. The project aims to enhance the characterization of electronic properties to address challenges in high electron mobility transistors.
UNOGAN aims at developing a fundamental approach for quantitative assessment of polarization-induced 2D carriers (and their type) or junctions at the interface(s) and focuses on unraveling chemical and electronic properties of critical regions, for e.g., recessed surfaces of the gate, which is expected to shed a deeper insight into one of the severe challenges GaN industry is facing.
Though successfully applied in narrow-bandgap semiconductors like Si, this SPM based approach currently face chal…
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