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The TEMPEST project investigates how the structure of quantum devices, particularly metallic gates, affects local strain and electronic properties at low temperatures. By enhancing electron microscopy techniques, it aims to improve the understanding of silicon/germanium-based qubits, facilitating the development of adv…
The TEMPEST project - Transmission Electron Microscopy Probing Electronic Structure and Strain at Low Temperatures - addresses a critical challenge in quantum device engineering: understanding how device morphology, especially metallic gate configurations, governs local strain in active layers and thus impacts electronic band structure and quantum transport.
TEMPEST focuses on the understanding of Si/Ge-based qubits, which mostly operate as spin qubits and as superconducting qubits.To unlock thi…
FORSCHUNGSZENTRUM JULICH GMBH
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