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The TECNO project focuses on integrating indium antimonide-based devices with silicon using a new electrochemical deposition method. This approach aims to enhance infrared sensing and quantum computing applications by creating high-quality semiconductor materials.
The overall goal of TECNO is to become an enabling technology for InSb-based devices on Si, which has numerous and wide-ranging applications, such as IR sensing, Majorana zero mode devices, and high-performance cryogenic amplifiers.
For this purpose, I propose an innovative approach to template-assisted selective deposition.
In the currently implemented integration technology at IBM, I will replace the semiconductor deposition process (MOCVD) by electrochemical methods.
This will enable entirely…
IBM RESEARCH GMBH
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