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SOTMEM focuses on developing a new architecture for magnetic RAM (MRAM) to enhance speed and reliability while reducing power consumption. The project aims to validate spin-orbit torque switches for efficient memory writing, facilitating the commercialization of low-power memory technologies.
SOTMEM addresses the growing need for scalable ultrafast non-volatile memories (NVM) to improve the reliability of logic circuitry and to reduce the ever increasing power consumption and energy loss in microprocessors.
Major technology actors and end-user companies are developing magnetic RAM (MRAM) as it is recognized as one of the most promising emerging NVMs.
However, mainstream MRAM, relying on spin transfer torque, suffers from limited speed, and reliability and degradation issues.
These th…
FUNDACIO INSTITUT CATALA DE NANOCIENCIA I NANOTECNOLOGIA
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