CORDIS Project
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This project focuses on enhancing the efficiency of green semiconductor lasers using molecular beam epitaxy on nearly dislocation-free Gallium Nitride single crystals. The aim is to improve the internal quantum efficiency of In-rich Indium Gallium Nitride devices and achieve stimulated emission beyond 500 nm.
The goal of this project is to develop the potential of molecular beam epitaxy on nearly dislocation free GaN single crystals for semiconductor lasers in the green spectral range (520-550nm).
The active structure will consist of In-rich InGaN layers.
Our goal is to push the internal quantum efficiencies of green emitting InGaN devices at 520 nm beyond 30% and to obtain stimulated emission beyond 500 nm.
This will be done by (i) engineering the active structure of the device to reduce the effects…
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Poland, WARSZAWA
Type: SME
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
SME: Yes
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