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The 'PerovSiC' project investigates the use of perovskite oxides in resistive random-access memory devices. By combining perovskite and carbide materials, it aims to enhance the performance and stability of these memory devices, paving the way for advancements in neuromorphic computing and logic applications.
Perovskite oxides are one of the most promising materials for developing new ReRAM devices, because they show a Resistive Switching (RS) behaviour and multilevel (ML) storage properties through reversible nanoionics redox phenomena.
However, several challenges remain to be addressed before introducing them in the emerging memories market.
From a material point of view, it is still unclear how to tune and control the mass transport properties at the nanoscale to get the best resistive switch resp…
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
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