CORDIS Project
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NetFISiC focuses on enhancing Silicon carbide materials to improve the performance of electronic devices like MOSFETs and Schottky diodes. The project aims to address challenges in high-temperature and high-power applications while training future researchers in semiconductor technologies.
The main scientific objective of NetFISiC is to provide Silicon carbide material (of various polytypes) with improved and adequate functional interfaces for getting a step forward in electronic devices performance.
Research efforts will be dedicated to solve the problems faces by important devices like MOSFET and Schottky diodes.
Besides, some fundamental research will be performed both on the growth aspect and on new and innovating devices.
Applications in high temperature, high power and harsh…
Partner organizations (coordinator is shown above), with normalized type and CORDIS activity type. Guests see up to 4 partners.
Sweden, Linköping
Type: University / higher education
Activity type: Higher or Secondary Education Establishments
SME: No
France, Grenoble Cedex 1
Type: University / higher education
Activity type: Higher or Secondary Education Establishments
SME: No
France, Le Bourget Du Lac
Type: SME
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
SME: Yes
Germany, Erlangen
Type: University / higher education
Activity type: Higher or Secondary Education Establishments
SME: No
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