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The MAGICAL project aims to advance Spin Transfer Torque Magnetic memories (STT-MRAM) technology to enhance microelectronics. It focuses on integrating various functions like logic and communication into a single chip, addressing power consumption and cost challenges in portable electronics and the Internet of Things.
Spin Transfer Torque Magnetic memories (STT-MRAM) are receiving a growing R&D effort within the microelectronic industry aiming at the replacement of DRAM or SRAM at sub-20nm nodes. MAGICAL seeks to significantly innovate through groundbreaking advances in ultra-low power multifunctional systems based on hybrid CMOS/magnetic technology.
With the development of portable electronics and of the Internet of Things (IOT), more and more functions must be embedded on chips: logic/memory, sensing, commu…
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