CORDIS Project
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This project aims to develop advanced thin-film transistors using amorphous Indium-Gallium-Zinc-Oxide on flexible substrates. The focus is on creating low-power, high-performance transistors for applications in flexible displays and wearable health sensors.
Thin-film transistor technologies are present in many products today that require an active transistor backplane e.g. flat-panel displays and flat-panel photodetector arrays.
Unipolar n-type transistors based on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) as semiconductor is currently the most promising technology for next generation products demanding a high-performant, low power transistor, manufacturable on flexible substrates enabling curved, bendable and even rollable displays. a-IGZO is…
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM
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