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The EleGaNt project focuses on developing a new method for growing gallium nitride semiconductor layers on various substrates. This technology aims to improve the performance and reduce the costs of electronic components, particularly for power electronics and radio frequency applications.
As the world becomes digitalized, the need for more energy efficient, faster and better performing Electronic Components and Systems (ECS) becomes paramount.
These ECS are fully dependent on the semiconductor materials within, currently over 90% silicon (Si)-based.
Pure Si technology can no longer cater to the needs placed upon ECS for power electronics and RF applications and thus new semiconductor technologies based on gallium nitride (GaN) are being explored.
GaN material properties make it t…
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