CORDIS Project
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This project investigates wide band gap Gallium Nitride (GaN) technology to enhance the performance and reliability of electronic devices. It focuses on understanding trapping effects in GaN transistors, which impact device efficiency and operational stability.
The project is focused on the characterisation and modelling of a new generation of wide band gap (WBG) GaN technology and devices for which strong impacts in terms of performance, reliability and robustness are expected.GaN material, despite its extraordinary properties and the strong demand of some markets (see following paragraphs) is still at R&D stage, mainly for reasons linked to a poor understanding of electrical effects in the material.
One of the main identified bottleneck relates to th…
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