CORDIS Project
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This project investigates the electrical properties of advanced semiconductor structures using Metal Gate and High-K materials on III-V substrates. It aims to understand conduction mechanisms and degradation characteristics to improve the reliability of future transistors in electronics.
Silicon-based technologies are approaching their physical limits, and technology breakthroughs, in terms of materials and processes, will be required as device sizes reach the nano-scale frontier.
To face these challenges, a new generation of devices based on a clever combination of selected materials is currently under consideration worldwide.
The aim of this project is to investigate the conduction mechanisms, in connection with degradation and breakdown characteristics, of Metal Gate/High-K s…
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