CORDIS Project
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This project explores the potential of cubic silicon carbide to enhance electronic devices by reducing defects and improving performance. It aims to develop new growth techniques and simulations to create high-efficiency power devices with lower energy consumption.
Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon.
Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application.
The possible growth on silicon substrate has remained for long period a real advantage in terms of scalability regarding the reduced diameter of hexag…
CONSIGLIO NAZIONALE DELLE RICERCHE
Partner organizations (coordinator is shown above), with normalized type and CORDIS activity type. Guests see up to 4 partners.
Germany, Erlangen
Type: University / higher education
Activity type: Higher or Secondary Education Establishments
SME: No
Italy, Baranzate Milano
Type: SME
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
SME: Yes
France, Le Bourget Du Lac
Type: SME
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
SME: Yes
United Kingdom, Coventry
Type: SME
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
SME: Yes
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