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The ATOMS project focuses on developing advanced transistors using atomically thin semiconductors. By optimizing various components, it aims to create high-performance complementary field effect transistors for future low-power electronic devices, addressing challenges in semiconductor scaling.
Atomically thin body (ATB) semiconductors such as transition metal dichalcogenides (TMDs) hold tremendous promise for scaling modern electronics because their ultra-thin channel provides excellent gate electrostatics.
Major semiconductor companies and international roadmaps for devices and systems have cited ATB TMDs for sub-1-nm semiconductor technologies beyond 2030. ATOMS will focus on developing ultra-scaled complementary field effect transistors (CFETs) based on ATB semiconductors, offering…
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